Stress relieving with resistive materials based on silicon carbide (SiC)
- authored by
- J. Gärtner, Ernst Gockenbach, H. Borsi
- Abstract
The stress relieving on components of high-voltage equipment with semiconducting materials based on silicon carbide (SiC) is discussed. Two different types of conducting layers are presented: one kind consists of a ceramic overglaze, the other is based on different organic mastics. The electrical behavior of both types of conductive layers, used in cables and cable accessories are also discussed.
- Organisation(s)
-
High Voltage Engineering and Asset Management Section (Schering Institute)
- Type
- Paper
- Pages
- 759-762
- No. of pages
- 4
- Publication date
- 1998
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Engineering, General Materials Science
