Stress relieving with resistive materials based on silicon carbide (SiC)
- verfasst von
- J. Gärtner, Ernst Gockenbach, H. Borsi
- Abstract
The stress relieving on components of high-voltage equipment with semiconducting materials based on silicon carbide (SiC) is discussed. Two different types of conducting layers are presented: one kind consists of a ceramic overglaze, the other is based on different organic mastics. The electrical behavior of both types of conductive layers, used in cables and cable accessories are also discussed.
- Organisationseinheit(en)
-
Fachgebiet Hochspannungstechnik und Asset Management (Schering-Institut)
- Typ
- Paper
- Seiten
- 759-762
- Anzahl der Seiten
- 4
- Publikationsdatum
- 1998
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Allgemeiner Maschinenbau, Allgemeine Materialwissenschaften