Influence of high-permittivity barriers on PD activity in three-layer dielectrics

verfasst von

S. M. Lebedev, O. S. Gefle, Y. P. Pokholkov, E. Gockenbach, H. Borsi, V. Wasserberg, N. Abedi, J. Szczechowski

Abstract

It is a well-known fact that the breakdown voltage of dielectrics in a divergent field may be increased by using an additional insulating layer (a barrier) placed at the optimal position between the electrodes. This paper is devoted to the investigation of the barrier effect in solid dielectrics in a quasi-uniform electric field, i.e. the study of the relationship between partial discharge (PD) activity and the barrier position in the insulating gap. It is established that the PD parameters depend on the barrier position in the gap. In particular, the ignition voltage of critical PDs is increased by more than 50% at the optimal barrier position compared to that for other barrier positions.

Organisationseinheit(en)

Fachgebiet Hochspannungstechnik und Asset Management (Schering-Institut)

Externe Organisation(en)

Tomsk Polytechnic University

Typ

Artikel

Journal

Journal of Physics D: Applied Physics

Band

37

Seiten

3155-3159

Anzahl der Seiten

5

ISSN

0022-3727

Publikationsdatum

21.11.2004

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Akustik und Ultraschall, Oberflächen, Beschichtungen und Folien

Elektronische Version(en)

https://doi.org/10.1088/0022-3727/37/22/016 (Zugang: Geschlossen)